BJT rapid fire
🇬🇧
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50 questions
| 🇬🇧 | 🇬🇧 |
| What does A Represent? | Delay time while junction capacitance is charging |
| Transistor is a device which is a____. A.Transferring voltage device B.Current operated one C.Power operated one D.Voltage operated one | B. Current operated one |
| Xyz | What is saturation |
| Time delayed while capacitance charges | What is delay time |
| ... | ... |
| A gives what | Alpha |
| The transistor can be operated in A.Active region B.Saturation region C.Cut-off region D.All of the above regions | D. All of the above regions |
| Aumgtsa | Nmhjv |
| What is saturation | Definition |
| Nathan | Shariff cis |
| Ffxbj | Cgivfhkvfknxgk |
| J gd afhdhk | All of s weeks sg d |
| A transistor is said to be operating in the cut-off region if____ A.Emitter junction is forward biased and collector junction is forward biased B.Emitter junction is reverse biased and collector junction is reverse biased C.Emitter junction is forward biased and collector junction is reverse biased | B.Emitter junction is reverse biased and collector junction is reverse biased |
| S is da ab | Slow ehh to us |
| Full form of BJT______ | Bipolar Junction Transistor |
| In a BJT A.The base region is sandwiched between emitter and collector B.The collector is sandwiched between base and emitter C.The emitter region is sandwiched between base and collector D.None of the above | A.The base region is sandwiched between emitter and collector |
| BJT is a _____ A. Current controlled device B. Voltage controlled device C. Both A and B D. None of the above | A. Current controlled device |
| Name the region which is (i) heavily doped (ii) lightly doped in a PNP transistor. | Heavily doped-emitter region Lightly doped-base region |
| Name any one basic application of transistors. | Amplifiers, switches, oscillators,etc.. |
| In which of the following circuit configurations the base current is controlled independently. A. Common Emitter circuit B. Common base circuit C. Common collector circuit | B. Common base circuit |
| The expression for the emitter injection efficiency (γ) is given by A.γ = iEp / (iEn + iEp) B.γ = iEn / (iEn + iEp) C. None of them | A.γ = iEp / (iEn + iEp) |
| Ic = B*iEp The proportionality factor 'B' in the above expression is called ____ A. Current amplification factor B. Base transport factor C. Both A and B | B. Base transport factor |
| IEn = iEs [e^(q*Veb/k*T ) - 1],∆pc=0 The above equation gives the emitter current in______mode. Where iEs is _________. | Normal mode magnitude of emitter saturation current |
| Which property is illustrated by the equivalent circuit shown in the figure? | Coupled Diode property |
| Wb stands for _____ A. Base width modulation B. Base width C. Effective width D . None of the above | B. base width |
| Who discovered early effect? A. William Shockley B. John Bardeen C. Walter Brattain D. None of the above | None of the above (J.M.Early) |
| Saturation can be reached by increasing _____current A. Emitter current (iE) B. Base current (iB) C. Collector current ( iC) | B. Base current (iB) |
| In the figure- C represents the time taken by the collector current to reach from it's initial value to 10% of its final value and is called _____time | Delay time -while junction capacitance is charging. |
| When the collector voltage is increased , the space charge layer takes up more of the metallurgical width of the base Lb and as a result, the effective base width Wb is decreased. This effect of called as ______. | Base narrowing or base-width modulation or early effect |
| What's the difference between zener and avalanche breakdown ? | Zener breakdown occurs because of high electric field Avalanche Breakdown is due to the commission of free electrons with atoms |
| Avalanche breakdown in a diode occurs when ________ is applied across the diode. A. low reverse voltage B. High forward voltage C. High reverse voltage D. Low forward voltage | C. High reverse voltage |
| Why is isolation of adjacent BJT's necessary? | To avoid electrical cross-talk between them. |